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| UMZ8.2T Diodes Zener diode UMZ8.2T !Applications Constant voltage control Noise suppression on signal line !External dimensions (Units : mm) 2.00.2 1.30.1 0.65 0.65 0.3 0.90.1 0.6 0.30.1 0.150.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta = 25C) Parameter Power dissipation Junction temperature Storage temperature Total of 2 elements. Symbol P Tj Tstg Limits 200 150 -55~+150 Unit mW C C !Electrical characteristics (Ta = 25C) Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR ZZ ZZK Min. 7.76 - - - Typ. - - - - Max. 8.64 0.50 30 60 Unit V A IZ=5mA VR=5V IZ=5mA IZ=0.5mA Conditions 0.1Min. 6R !Features 1) Small surface mounting type. (UMD3) 2) Multiple diodes with common cathode configuration. 3) High reliability. 1.250.1 2.10.1 0~0.1 UMZ8.2T Diodes !Electrical characteristic curves (Ta = 25C) 100m DYNAMIC IMPEADANCE : ZZ () 100 300 POWER DISSIPATION : Pd (mW) 1 ZENER CURRENT : IZ (mA) 10 ZENER CURRENT : IZ (mA) 10m 1m 100 10 1 100n 0 200 Ta=25C 10 100 2 4 6 8 10 12 14 1 0.1 0 0 25 50 100 150 ZENER VOLTAGE : VZ (V) AMBIENT TEMPERATURE : Ta (C) Fig. 1 Zener voltage characteristics Fig. 2 Operating resistance Zener current characteristics Fig. 3 Derating curve |
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